| 摘要 |
PROBLEM TO BE SOLVED: To reduce possibility of forming hollows in a conductive layer by forming a seed film on a substrate, oxidizing a part of the seed film, reducing a part of the seed film, and forming a conductive film on the seed film. SOLUTION: On the upper face of a semiconductor substrate 10, field insulation regions 12 and doped regions 14 are formed, an inter-level insulation(ILD) layer 11 is formed in forming a contact on one of the doped regions 14, a double inlay opening piercing the ILD layer 11 is formed, a barrier film and a Cu seed film are laminated on the ILD film 11 and in the double inlay openings, and are exposed to the air to form an oxide seed film 34 having residual nonoxidative part and an oxidative part, a part of the seed film 34 is reduced to form a restored seed film 74, and an electroplating Cu film 76 is formed thereon to constituted a conductive layer 78.
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