| 摘要 |
A new ferroelectric memory element is disclosed. The ferroelectric material exhibits little polarization fatigue up to 1012 switching cycles, long retention and minimal tendency to imprint, producing a nonvolatile, nondestructive readout memory element having low saturation voltage for switching. The memory element can be manufactured using conventional CMOS transistor technology and may include a SrBi2Ta2O9 ferroelectric thin-film between metallic electrodes, and an oxide, optionally, conventional SiNxOy layer or Si3N4-SiO2 bilayer, to protect the substrate from contaminant migration from the ferroelectric layer. Platinum or a metal oxide material (e.g., RuO2, IrO2, LaxSr1-xCoO3) may serve as electrodes and provide a lattice matching material for the ferroelectric layer overlying the bottom electrode. Formation of SrBi2Ta2O9 or other ferroelectric member of the layered perovskite family may be integrated into conventional CMOS transistor processing. |
