MONOMER FOR PHOTORESIST, COPOLYMER THEREOF AND PHOTORESIST COMPOSITION USING THE SAME

摘要

PURPOSE: A monomer for photoresist is provided which responds very sensitively to extreme wavelength, even while not using photo acid generator or using the photo acid generator at a minimum and is suitable to lithographic process using a light source of far ultra violet region, particularly ArF light source. A highly efficient photoresist composition is also provided which can be developed even with common alkaline developing solution. CONSTITUTION: The monomer for photoresist and a copolymer containing the same have the following chemical formula 1 and 8 respectively: (chemical formula 1), wherein m is 1 or 2, (chemical formula 8), wherein m is 1 or 2, n is 1, 2 or 3, and X is C, NH or O. Further, the photoresist composition comprises said compound of the chemical formula 8, photo acid generator and common organic solvent.