| 摘要 |
PURPOSE: A semiconductor device and method thereof are provided to minimize a leakage current of a semiconductor device adopting an LDD and silicide structure and to prevent the deterioration of the characteristics and the reliability during a high temperature process and a contact process. CONSTITUTION: A method comprises the following processes to solve the above problems. Agate is formed on top of an N-type semiconductor substrate(11). And, a P-type lightly doped impurity ion is implanted in the semiconductor substrate using the gate as a mask. And then, a side wall spacer(14) is formed on both sides of the above gate. By implanting a P type heavily doped impurity ion in the semiconductor substrate using the above gate and the side wall spacer as a mask, an LDD(Lightly Doped Drain) region(15) and a source/drain(16) are formed. And a first and a second nitrogen ion implantation layer(17,18) are formed with different nitrogen ion implantation conditions using the above gate and the side wall spacer as a mask, and then a silicide layer(19) is formed on the gate and the source/drain. By preventing the agglomeration of the silicide layer formed on surface of the source/drain, the morphology of the interface of the source/drain and thus the reliability of a contact process is improved.
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