| 摘要 |
PURPOSE: An apparatus for injecting gas in a metal organic chemical vapor deposition system for a semiconductor is provided to accurately and easily control a shower head, to separately supply a process gas and a process source so that the process gas and process source do not react together before their injection, and to prevent inner wall of the shower head from evaporating. CONSTITUTION: An apparatus for injecting gas in a metal organic chemical vapor deposition system for a semiconductor comprises a thermal transmitting plate(110), a cover tube(120), a gas line(151), a source line(152), a heater coil(140), a distributing plate(150), an injecting plate(160), a temperature sensor(170) and a cooling means. The thermal transmitting plate(110) on upper portion of a process chamber(12) has a gas pathway and a source pathway. The cover tube(120) of ring type is installed on the thermal transmitting plate(110). The gas line(151) and source line(152) are through each side of the cover tube(120). The heater coil(140) in the cover tube(120) heats the thermal transmitting plate(110). The distributing plate(150) is installed under the gas pathway and a source pathway of the thermal transmitting plate(110) to evenly distribute a process gas and a process source. The injecting plate(160) under the distributing plate(150) evenly injects the process gas and a process source. The temperature sensor(170) senses the temperature of the process gas and process source, and transmits a signal to a controller. The cooling means cools the thermal transmitting plate(110) according to a signal from the controller.
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