| 摘要 |
PURPOSE: A method is provided to fabricate a semiconductor device which can assure mis align margin of a photo lithography process. CONSTITUTION: A method for fabricating a semiconductor device capable of assuring mis align margin comprises a step of forming a first conductive film pattern on a semiconductor substrate(21). Then, a planarization insulating film is formed on a front surface of the semiconductor substrate in order to cover the first conductive film pattern, and a contact hole(35) revealing the surface of the semiconductor substrate is formed by patterning the planarization insulating film. And, to prevent the electric shortage in case of mis align when forming the contact hole, a buffer film pattern(37a) is formed on both side walls of the contact hole. And a second conductive film(39) is formed to bury the contact hole. According to the method, mis align margin can be assured in case of mis align when forming the contact hole, by forming the buffer film pattern on both side walls of the contact hole.
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