APPARATUS FOR HIGH DENSITY CHEMICAL VAPOR DEPOSITION

摘要

PURPOSE: An apparatus for the high density chemical vapor deposition is provided, to allow the reaction gas to be uniformly supplied to the above of a wafer, thereby to prevent the thermally unstable reaction product from produced. CONSTITUTION: The apparatus comprises a chamber (20) whose upper part is coated with a cover (30) to allow it to be isolated and which contains a boat (24) for piling up a wafer, capable of rising and falling; a lifter (26) which is set in the low part of the chamber (20) to rise or fall the boat (24); a wafer entrance (36) which is formed in the one side of the chamber (20) and is opened or closed by a door; a ventilation pipe (38) which is connected with the one side of the chamber (20); and a gas injection pipe (40). The gas injection pipe (40) passes through the chamber (20) from the outside and extends to the inside, its terminal exists above the boat (24), and its diameter increases on reaching its terminal.