LOW TEMPERATURE CVD PROCESSES FOR PREPARING FERROELECTRIC FILMS USING BI ARYLS

摘要

Chemical vapor deposition is used to form a film of Bi oxide, Sr oxide, and Ta oxide on a heated substrate by decomposing the precursors of these oxides adjacent to the substrate. The precursor of Bi oxide is a Bi complex which includes at least one aryl group and is decomposed at a decomposition temperature lower than 450 DEG C. The film of Bi, Sr, and Ta oxides obtained by low-temperature CVD is predominantly non-ferroelectric, but can be converted into a ferroelectric film by a subsequent heating process.