发明名称 |
ELECTROSTATIC DISCHARGE PROOF TRANSISTOR OF SEMICONDUCTOR CHIP AND LAYOUT THEREOF |
摘要 |
PURPOSE: An electrostatic discharge proof transistor of semiconductor chip and a layout thereof are provided to minimize the layout size, and to prevent the electrostatic discharge from harming the semiconductor chip. CONSTITUTION: An electrostatic discharge proof transistor of semiconductor chip and a layout thereof include a plurality of input/output pads. Each of the plurality of input/output pads includes an electrostatic discharge proof transistor of diode topology, and an electrostatic discharge proof transistor with second type. The electrostatic discharge proof transistor are coupled between the input/output pads and the ground. The electrostatic discharge proof transistor of second type includes a plurality of power electrostatic discharge proof transistors. The electrostatic discharge proof transistor of second type are coupled in parallel with each other.
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申请公布号 |
KR20000034042(A) |
申请公布日期 |
2000.06.15 |
申请号 |
KR19980051194 |
申请日期 |
1998.11.27 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YANG, HYANG JA;SUH, YOUNG HO |
分类号 |
H01L27/06;(IPC1-7):H01L27/06 |
主分类号 |
H01L27/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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