发明名称 ELECTROSTATIC DISCHARGE PROOF TRANSISTOR OF SEMICONDUCTOR CHIP AND LAYOUT THEREOF
摘要 PURPOSE: An electrostatic discharge proof transistor of semiconductor chip and a layout thereof are provided to minimize the layout size, and to prevent the electrostatic discharge from harming the semiconductor chip. CONSTITUTION: An electrostatic discharge proof transistor of semiconductor chip and a layout thereof include a plurality of input/output pads. Each of the plurality of input/output pads includes an electrostatic discharge proof transistor of diode topology, and an electrostatic discharge proof transistor with second type. The electrostatic discharge proof transistor are coupled between the input/output pads and the ground. The electrostatic discharge proof transistor of second type includes a plurality of power electrostatic discharge proof transistors. The electrostatic discharge proof transistor of second type are coupled in parallel with each other.
申请公布号 KR20000034042(A) 申请公布日期 2000.06.15
申请号 KR19980051194 申请日期 1998.11.27
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YANG, HYANG JA;SUH, YOUNG HO
分类号 H01L27/06;(IPC1-7):H01L27/06 主分类号 H01L27/06
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