| 摘要 |
PURPOSE: A method for a manufacturing semiconductor device is provided to reduce resistance of a gate electrode and to improve process yield and uniformity of transistor characteristics. CONSTITUTION: A first photoresist(12) is formed on a semiconductor substrate(11) to expose a portion of the substrate(11). Then, a first recess region is formed on the semiconductor substrate(11) using the first photoresist(12) as a mask. Next, an insulating film(14) is deposited on the first photoresist(12) and semiconductor substrate(11). Then, a second photoresist(15) having width wider than that of the first recess region are formed on the first insulating film(14) of both sides of the first recess region. Next, sidewall insulating films(16) are formed on both sides of the first photoresist(12) and recess region by etching the insulating film(14) using the second photoresist(15) as a mask. Then, a second recess region(17) is formed by using the sidewall insulating films(16) and the first/second photoresist(12,15) as masks. Then, a metal film is deposited on the first recess region and the second photoresist. Then, T shape gate electrodes are formed and then the first photoresist and sidewall insulating films are sequentially removed.
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