| 摘要 |
PURPOSE: A method of fabricating a semiconductor device is provided to be able to control a floating body effect in a fine SOI device by forming a body layer of a predetermined size under gates, and prevent the generation of parasitic capacitance by excluding the usage of doped sidewalls. CONSTITUTION: An epitaxial barrier layer is formed on a first p type active layer(33) electrically isolated by a buried insulating layer(32), and a body contact hole exposing a portion of a semiconductor substrate(31) is formed by patterning the epitaxial barrier layer, active layer and buried insulating layer. A body layer(37) is formed on the exposed semiconductor substrate(31) by a selective epitaxial growth method. Next, the epitaxial barrier layer is removed and a field oxide film(41) is formed on a portion of the active layer. Then, gates(43) are formed on a portion corresponding to the body layer and a portion of the active layer through a gate oxide film(42), n type impurity area is formed on the active layer using the gates as masks.
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