| 摘要 |
PURPOSE: A high efficiency charge pump is provided to add the forth charge pump into the second charge pump which provides 2Vcc level voltage to deliver internal high voltage to a memory device without voltage drop. CONSTITUTION: The high efficiency charge pump includes the first charge pump(100), a voltage delivering transistor(M19,NM19) and a control signal generator(200). The first charge pump receives a charge pump driving signal(P1) to increase the driving voltage(Vcc) to 2Vcc level internal high voltage(VCH). The voltage delivering transistor(M19,NM19) outputs the internal high voltage as a word line driving voltage. The control signal generator(200) receives the charge pump driving signal(P1) and an output control signal(P2) and generates a voltage delivering transistor control signal controlling the voltage delivering transistor. The charge pump is characterized in that the pump generates 3Vcc level voltage without using a fed-back input of internal high voltage.
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