| 摘要 |
PURPOSE: A cascade structure and a method for manufacturing the same are provided to improve the characteristic of a semiconductor device by enhancing the amplifying rate of a MOS transistor. CONSTITUTION: A base of a bipolar transistor and a source(5), which is used as a source of a MOS transistor, are formed on a semiconductor substrate(1) by means of an ion implantation process. A collector(7) and a drain(8) are sequentially formed in the base and the source(5). At the same time, emitters(6,6') are formed on the semiconductor substrate(1). Then, a trench is formed at the base, source(5), collector(7) and drain(8). An oxide layer is formed on the trench. A gate(9) is formed by filling polysilicon in the trench. Drains(7,7') and collectors(7'7') are connected to each other.
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