发明名称 |
PROCESS FOR METAL GETTERING IN SOI SUBSTRATES |
摘要 |
A process for inhibiting the formation of metal precipitate defects in an SOI wafer is disclosed. The process includes heating the wafer for a time sufficient to reduce metal concentration in the monocrystalline film through diffusion into the bulk of the wafer. The SOI structure has a permeable insulating layer to allow the diffusion of metals to occur. The diffusion through the oxide can be accomplished by forming direct Si or Si contact regions, by implanting ions selectively into the oxide, or by employing a very thin oxide layer.
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申请公布号 |
WO0010201(A9) |
申请公布日期 |
2000.06.15 |
申请号 |
WO1999US18112 |
申请日期 |
1999.08.10 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
FALSTER, ROBERT, J.;CRAVEN, ROBERT, A. |
分类号 |
H01L21/322;H01L21/762;(IPC1-7):H01L21/322;H01L21/324 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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