METHOD FOR FORMING METAL LINES OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming metal lines of a semiconductor device is provided to prevent a photoresist pattern from distorting using a non-permissive layer. CONSTITUTION: An insulation layer formed on a semiconductor substrate is flattened. A non-permissive layer is formed on the flattened insulation layer. A photoresist layer is formed on the non-permissive layer. The photoresist layer is patterned by a photograph process. The non-permissive layer and flattened insulation layer are continuously etched via the patterned photoresist layer, so that a damascene area is formed.