METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to fabricate a large integrated semiconductor device which can form an LDD(Lightly Doped Drain) without forming a side wall. CONSTITUTION: A method enables fabricate a MOS transistor of LDD structure without using a side wall to improve the operation characteristics of the semiconductor device. After a gate oxide (14)and a gate electrode material are deposited on top of a semiconductor substrate(11) in sequence, a gate electrode(15) is formed by patterning the gate electrode material. And, a source and an LDD drain are formed simultaneously by implanting an impurity ion of high density, after forming a photoresist pattern on top of the above gate electrode and a region where a lightly doped drain are to be formed.