| 摘要 |
PURPOSE: A semiconductor neural electrode and a manufacturing method thereof are provided to freely regulate thickness of a probe of the semiconductor neural electrode, to acquire a manufacturing process of low temperature, to acquire a wide range of doping concentration, and to minimize corrosion due to human liquid. CONSTITUTION: A lower dielectric layer of oxide layer/nitride layer/oxide layer is formed on the front side of a silicon wafer. A Cr/Au layer is evaporated and patterned so that electrodes, combining pads, and connection tracks are formed. An upper dielectric layer of oxide layer/nitride layer/oxide layer is formed. An aluminum layer is evaporated by a sputtering process, and predetermined areas are etched by a photograph process. An oxide layer for a mask layer is evaporated. A 2nd aluminum layer is evaporated by the sputtering process, and the predetermined areas are etched by the photograph process. And trenches are formed by a plasma etching process. The thickness of a probe of the semiconductor neural electrodes can be freely and precisely regulated by using wet and dry etching processes.
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