| 摘要 |
PURPOSE: A method for forming an isolation region of a semiconductor is provided to improve isolation characteristics and to suppress junction leakage current by preventing impurity ions from moving off around a border among boards. CONSTITUTION: A method for forming an isolation region of a semiconductor includes first thru fifth steps. In the first step, a semiconductor board(21) is divided into an active region and a field region. In the second step, a trench(25) with predetermined depth is formed in the field region. In the third step, a nitrogen membrane(23) is formed on the surface of the semiconductor board(21). In the forth step, an isolation membrane(28a) is formed in the trench(25). In the fifth step, a well region(29) is formed on the surface of the semiconductor board(21).
|
