| 摘要 |
PURPOSE: A semiconductor wafer holder is provided to acquire high conductivity so that an electrostatic discharge is prevented, and a cleaning process is easily performed. CONSTITUTION: Contact portion of a semiconductor wafer holder is composed of a sinterredsilicon carbide substrate. The contact portion is coated by a silicon carbide film of condensed chemical vapor deposition. A crystal face oriention of the silicon carbide film is one of (111), (110), (220) and (200) of miller index. Thereby, an electrostatic discharge can be prevented, and a cleaning process can be easily performed.
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