SOLID STAGE IMAGE SENSOR AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A solid state image sensor and a method for manufacturing the same are provided to reduce the number of element for applying clock signals by using 1-phase clocking. CONSTITUTION: The second conductive type well(13) is formed on the first conductive type substrate(11). The first conductive type BCCD(Buried Charge-Coupled Device)(15) is formed on the second conductive type well. The first poly gate(19) is formed on a region of the BCCD(15). The second poly gate(19a) is formed at one side of the first poly gate(19). The second poly gate(19a) receives the same signal as the first poly gate(19). A floating gate is formed at the other side of the first poly gate(19). A high density impurity region(23a) is formed on the BCCD region(15) of a lower portion of the second poly gate(19a). The second low density impurity region(23) is formed at one side of the high density impurity region(23a).