发明名称 CONTACT NODE
摘要 <p>The present invention pertains to the making of permanent connections in the production of apparatus containing microelectronic components and semiconductor devices. This invention essentially relates to contact nodes for assembling inter alia multilayered switching structures for polycrystalline modules and for mounting crystals of large-scale IC on a switching structure during the production of said polycrystalline modules. The contact node comprises at least two metallised contacts connected to electroconductive tracks (2, 6) provided on the surfaces of the switching layers (3, 7). These layers are made of a dielectric material, overlap each other and are electrically and mechanically connected together by an electroconductive binding material (8). The contact node consists of a splice that connects, on the one hand, a contact consisting of a metallised pad (1) connected to the electroconductive tracks (2) at the surface of the lower switching layer (3) and, on the other hand, the corresponding contact consisting of a metallised opening (4) formed in the layer of dielectric material.</p>
申请公布号 WO2000035257(A1) 申请公布日期 2000.06.15
申请号 RU1999000062 申请日期 1999.03.04
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