| 摘要 |
Photolacquer covered layer sequence production comprises photolacquer degradation monitoring during plasma etching by activated hydrogen spectral line intensity determination. In the production of a photolacquer covered layer sequence on a silicon substrate, involving spectrographic analysis of plasma-activated etching gases during plasma etching, degradation of the photolacquer is monitored by evaluating the intensity of a spectral line of activated hydrogen released into the plasma from the photolacquer. Preferred Features: The intensity of the spectral line of 656.278 nm wavelength, emitted by ionized hydrogen, is measured.
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