| 摘要 |
PURPOSE: A measuring method of an MCDL(Minority Carrier Diffusion Length) of a semiconductor device is provided to measure easily an effective diffusion length in which bulk and surface characteristics are combined, thereby simplify the design of the device, saving manufacturing costs and enhancing the reliability of produced device. CONSTITUTION: First, a semiconductor device which a plurality of impurity regions(12) are formed by constant spaces, an insulating film(14) and a metal layer(20) are sequentially formed, a window(18) is formed on the metal layer, and optical shadow masks(16) of various diameters are formed in the window. Then, light having higher energy than the band of the semiconductor is irradiated to the semiconductor. Next, two terminals are connected to the metal layer(20) and optical shadow masks(16) to measure excessive carriers of various lengths. Finally, the MCDL is measured from the measured carriers.
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