METHOD FOR FORMING CAPACITOR INCLUDING TANTALUM OXIDE

摘要

PURPOSE: A method for forming capacitor including tantalum oxide is provided to thicken a tantalum oxide layer on a lower capacitor electrode for preventing a surface of the electrode from oxidation. CONSTITUTION: A method for forming capacitor including tantalum oxide includes first thru fifth steps. In the first step, a lower capacitor electrode(42) is formed electrically coupled to a conduction extension layer(41) on a board(40). In the second step, a plasma nitride layer(43) is formed on the lower capacitor electrode(42). In the third step, a tantalum oxide dielectric layer(44) is formed on the plasma nitride layer(43). In the forth step, an oxide annealing is performed on the tantalum oxide dielectric layer(44). In the fifth step, a upper capacitor layer is formed on the plasma nitride layer(43).