| 摘要 |
PURPOSE: A fine patterning method is provided to prevent a swelling phenomenon of a photoresist and to minimize a dimensional tolerance by using an inorganic photoresist instead of an organic photoresist. CONSTITUTION: An insulating layer(2) for patterning is formed on a semiconductor substrate(1). An inorganic photoresist(3), such as an GeSe glass film is then coated on the insulating layer(2). Impurity ions, for example Ag2Si ions are selectively implanted into the inorganic photoresist(3). By irradiating an UV(ultra violet) beam to the doped inorganic photoresist(3), a thin metal film is formed on the surface of the doped inorganic photoresist(3). By developing the resultant structure using a plasma, the undoped inorganic photoresist(3) is removed.
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