| 摘要 |
PURPOSE: A method for plasma etching a compartment surface of an upper side of a faraday cage is provided to attain an etched plane with various shapes by changing the direction of etching, and to etch a board uniformly by distracting or concentrating the ion flux. CONSTITUTION: A method for plasma etching a compartment surface of an upper side of a faraday cage(14) includes first thru third steps. At the first step, a faraday cage(14) is deposited in an apparatus for plasma etching. At the second step, a board deposited in the faraday cage(14) is etched. At the third step of the present invention, at least a part of the upper side of the faraday cage is etched using various precursor porous compartments(16). The part etched, the direction of etching, and the velocity of etching are controlled using the various precursor porous compartments(16).
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