| 摘要 |
PURPOSE: A thin film transistor having an off-set layer of high band gap is provided to achieve a large on/off current ratio to improve the resolution of an LCD. CONSTITUTION: A thin film transistor having an off-set layer of high band gap comprises a substrate(70), a drain/source layer(60) containing drain and source, an off-set layer(40) formed on the drain, source and substrate(70), a channel layer(30) formed on the off-set layer(40), a gate insulation layer(20) formed on the channel layer(30), and a gate(10) having a high electric resistance to isolate the channel layer(30) from itself(10). The off-set layer(40) has a high band gap energy to prevent a band-to-band tunneling. The channel layer(30) has a low band gap energy enough to transfer charge carriers.
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