NONVOLATILE FERROELECTRIC MEMORY

摘要

PURPOSE: A nonvolatile ferroelectric memory is provided to decrease the number of cycles which is authorized to a reference cell and extend operation life of a memory by constructing a memory array so that a reference cell word line, which is connected with a sense amplifier which is not selected, is not selected in read/write operation. CONSTITUTION: A memory cell and reference cells, which has one select transistor(MB) and one ferroelectric storage capacitor(Cs) respectively, are arrayed in a form of a matrix in a nonvolatile ferroelectric memory. The reference cell is operated only when both of a select signal of the corresponding reference cell and the reference cell word line(RWL) are authorized by having a logic gate in which an output end is connected to a gate of a select transistor of the reference cell(MB) and one input end is connected to a reference cell word line(RWL) and the other input end is connected to a selection signal of corresponding reference cell. According to this invention, because an information of the reference cell is read by turning on the selection transistor of the corresponding reference cell(MB) which is connected to the selected sense amplifier, the number of cycles of a voltage which is authorized to the reference cell decreases. So a total life of memory increases.