| 摘要 |
PURPOSE: A method for forming metal lines in a semiconductor device is provided to prevent a void and a hillock due to a short length effect, so that a charge moving characteristic is improved. CONSTITUTION: In a step for evaporating metal layer, titanium, aluminum and nitridetitanium are sequentially evaporated through contact holes. In a step for patterning metal layer, the evaporated titanium, aluminum and nitride titanium are patterned by a photo-etching process. Here, in the step for patterning metal layer, a length and width of the titanium, aluminum and nitride titanium are less than those of the metal lines. Thereby, a void and a hillock due to a short length effect can be prevented, so that a charge moving characteristic is improved.
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