GATE FLASH CELL AND METHOD THEREOF

摘要

PURPOSE: An insulated gate flash cell of a semiconductor device and a method for manufacturing the same are provided to effectively improve the program and to achieve the high integration of a semiconductor device. CONSTITUTION: A gate flash cell of a semiconductor device comprises a semiconductor substrate having a plurality of trenches. After depositing polysilicon on a surface of a gate oxide layer, a floating gate(36) is formed by removing a predetermined portion of the floating gate. The first gate insulating layer is formed at one sidewall and an underside of the trench. The second gate insulating layer is formed on a surface of the semiconductor substrate except for the other sidewall of the trench. An impurity area is formed at an inner side and below the underside of the trench of the first gate insulating layer. A channel area is formed below the second gate insulating layer. The floating gate(36) is formed above the impurity area. The third gate insulating layer is formed on a surface of the first gate. A control gate(38) is formed on the surface of the third gate insulating layer.