发明名称 THIN FILM MAGNETIC HEAD
摘要 PURPOSE: A thin film magnetic head is provided to be corresponded to a high-coercive force medium as a method for reducing a transient length for a high-density recording. CONSTITUTION: A Fe system thin film having more 15Kg of saturation magnetic flux density is constructed at a single surface or both faces of the upper magnetic layer(5) and the lower magnetic layer(2) having 4-micrometer thickness. A Permalloy is sputtered as 0.1 micrometer on Al2O3-TiCL/Al2O3 and performs a patterning as 4-micrometer thickness except a magnetic layer shape by using photoresist, and the Permalloy is plated as 3.6-micrometer thickness using an electric plating method. A Fe-N film(6a) is constructed by sputtering the magnetic layer shape in the RF magnetron method by using an Fe target after the magnetic layer shape is removed by using photoresist. The flow rate of N2 is about 3-4 sccm. After the magnetic layer shape is patterned, an Fe-N film(6b) and a permalloy sputter film is manufactured using an ion milling. After a gap and a coil(3) are formed by using a general method, the upper magnetic layer(5) sputters the Fe-N film(6b) as a 0.4 micrometer thickness. In addition, the permalloy is plated as a 3.6 micrometer by making the Fe-N film(6b) as a seed layer, and the photoresist is removed and the remainder Fe-N film is removed using an ion milling.
申请公布号 KR100259386(B1) 申请公布日期 2000.06.15
申请号 KR19930001140 申请日期 1993.01.29
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 HEO, CHUNG-SEOK
分类号 G11B5/62;(IPC1-7):G11B5/62 主分类号 G11B5/62
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