| 发明名称 |
HIGH PURITY, SILICONIZED SILICON CARBIDE HAVING HIGH THERMAL SHOCK RESISTANCE |
| 摘要 |
<p>This invention is a high strength, thermal shock resistant, high purity siliconized silicon carbide material made from siliconizing a converted graphite SiC body having at least 71 vol% silicon carbide therein.</p> |
| 申请公布号 |
WO0034203(A1) |
申请公布日期 |
2000.06.15 |
| 申请号 |
WO1999US26568 |
申请日期 |
1999.11.09 |
| 申请人 |
SAINT-GOBAIN INDUSTRIAL CERAMICS, INC. |
发明人 |
DUBOTS, DOMINIQUE;HAERLE, ANDREW |
| 分类号 |
C04B41/88;C04B35/573;C04B41/85;H01L21/26;H01L21/31;H01L21/324;(IPC1-7):C04B35/565;H01L21/02 |
主分类号 |
C04B41/88 |
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