METHOD FOR FORMING LINE PATTERN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a line pattern of a semiconductor device is provided to reduce line resistance by silicidation. CONSTITUTION: An insulation layer is formed on upper area of a semiconductor substrate. Next, a trench is formed by etching the insulation layer with a predetermine depth. Next, a polysilicon is evaporated on the result area. Next, the polysilicon layer is etched by a chemical/mechanical polishing so that a polysilicon line layer is formed in the trench. Next, a metal layer is evaporated on the result area. Next, a heat process is performed to the metal layer so that a silicide layer is formed on the upper area of the polysilicon line layer.