METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A dual gate formation method having same profile is provided to simplify the manufacturing process and to overcome the difficulty of ion implantation by using a doped polysilicon without using additional implantation. CONSTITUTION: After forming a first insulating layer on a semiconductor substrate(31), a first polysilicon layer doped with ions of a first conductive type is formed on the first insulating layer. By etching the first polysilicon layer and the first insulating layer using a first photoresist pattern, a first gate(39) is formed. A second insulating layer is formed on the resultant structure. A second polysilicon layer doped with ions of a second conductive type is then formed on the second insulating layer. By etching the second polysilicon layer and the second insulating layer, a second gate(47) is then formed.