| 摘要 |
PURPOSE: A fabrication method of MOSFET having an SOI(silicon on insulator) is provided to simplify the manufacturing process and to stabilize a threshold voltage by forming a second epi-silicon layer having higher height compared to a second insulating layer using double epitaxial growing. CONSTITUTION: After sequentially forming a first insulating layer(2) and a first epi-silicon layer(3) on a semiconductor substrate(1), an active region is defined by selectively etching the first epi-silicon layer(3). After forming a second insulating layer(4) on the resultant structure, a hole is formed by selectively etching the second insulating layer(4) to expose a gate region. A second epi-silicon layer(5) is then grown by using the surface of the exposed active region as a seed, in which the height of the second epi-silicon layer(5) is higher than that of the second insulating layer(4). Then, a third insulating layer(6) and a gate(7) are sequentially formed.
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