发明名称 Apparatus for reducing residues in semiconductor processing chambers
摘要 <p>The disclosure relates to a method and apparatus for limiting residue build-up by lining with a ceramic material (32) the exhaust plenun (222) and exhaust manifold (239) of a processing chamber. An air gap is provided between ceramic liner (236) and the processing chamber walls (134) increases the dielectric value of the ceramic liner, and further inhibits the build-up of residues. The ceramic liner retains sufficient heat to allow the elimination of heaters typically used to heat the aluminum walls during a clean operation, if the clean operation is commenced immediately after a process step so that the ceramic retains the necessary heat from the previous processing step. The provision of an air gap aids in this heating, preventing the ceramic heat from being drawn off by direct contact with the aluminum walls. In a preferred embodiment, the ceramic liners are attached to the chamber walls with TEFLON TM (polytetrafluoroethylene) screws (40,41). <IMAGE></p>
申请公布号 EP0780490(B1) 申请公布日期 2000.06.14
申请号 EP19960309217 申请日期 1996.12.17
申请人 APPLIED MATERIALS, INC. 发明人 JUN, ZHAO;TABATA, ATSUSHI;CHO, TOM;QIAO, JIANMIN;GUO, XIN SHENG;SCHREIBER, ALEX
分类号 C23C16/44;C23C16/455;C23C16/458;C23C16/50;C30B25/02;H01J37/32;H01L21/205;H01L21/31;H01L21/687;(IPC1-7):C23C16/44;C30B25/14 主分类号 C23C16/44
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