Semi-conductor lasers

摘要

The laser includes an active layer (1) sandwiched between two confinement layers (2,3) to form a p-n junction. Holes are arranged on either side of the cavity (G) in at least one layer so as to form photonic band gap structures along its sidewalls (g1,g2) and across its ends (M1,M2). A two-dimensional material is sufficient since the optical mode is confined in the direction of the thickness of the laser by the multilayer structure formed during its growth.