| 摘要 |
<p>A semiconductor quantum oscillation device, which realizes Bloch oscillation on the basis of a novel carrier injection scheme, comprises a multilayer semiconductor structure and a means for applying a voltage to said structure. The multilayer structure comprises a tunneling injection region and a pair of oscillation regions which are located on both sides of the tunneling injection region and adjacent to it. The voltage applied across the tunneling region and the pair of oscillation regions causes valence electrons to enter into the conduction band through interband tunneling in the tunneling injection region and leads to electrons and holes being injected into the pair of oscillation regions, respectively. The electrons and holes injected this way undergo quantum oscillation motion and produce far-infrared radiation. The device of the present invention will pave the way for effectively utilizing the electromagnetic spectral resource between the high-end of millimeter-wave and the low-end of far infrared. <IMAGE></p> |
