发明名称 POWER TRANSISTOR CELL
摘要 A power transistor cell includes an air bridge and a plurality of individual transistors. Each of the plurality of individual transistors has at least one separate connection contact. Each of the at least one separate connection contact of the plurality of individual transistors is thermally conductively connected to one another through the air bridge forming air bridge connections, which define a contact plane. A surface of the contact plane that contains each connection path between two of the air bridge connections defines a convex region. The air bridge is formed to have, in the contact plane, dimensions that exceed a smallest convex region containing all of the air bridge connections in all directions of the air bridge. Each of the plurality of power transistor cells can be respectively thermally conductively connected to one another through the air bridge to form a block of power transistor cells. The air bridge has a dimension that significantly exceeds the length of the contact fingers in the longitudinal direction of the contact fingers, so that components of the air bridge that are present at the sides of a row of contact fingers can be mounted on metallic connection surfaces or on the substrate surface by conductive contact pillars. The configuration provides good heat dissipation from the individual transistors.
申请公布号 EP1008186(A1) 申请公布日期 2000.06.14
申请号 EP19980948753 申请日期 1998.08.07
申请人 INFINEON TECHNOLOGIES AG 发明人 ZWICKNAGL, HANS-PETER;BAUREIS, PETER;MUELLER, JAN-ERIK
分类号 H01L29/73;H01L21/331;H01L21/768;H01L23/367;H01L23/48;H01L23/522;H01L25/07;H01L29/737;(IPC1-7):H01L29/73 主分类号 H01L29/73
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