A method of manufacturing a sputtering target

摘要

It is an object of the present invention to provide a sputtering target that greatly controls formation of the coarse particles during the sputtering process, thereby enhancing productivity for dielectric protective film production. The present invention provides a sputtering target of ZnS-SiO2, produced by sintering a mixture of spherical SiO2 particles having an average size of 1 to 10 mu m and ZnS particles. It is useful for production of a protective film that is suitable for an optical disk, in particular phase-change type optical disk.