| 摘要 |
PURPOSE: A metal plug formation method is provided to prevent a generation of voids in a contact hole and to improve a contact property by performing a cleaning process for removing the etching residues after forming a tungsten spacer. CONSTITUTION: After forming a junction region(22) in a semiconductor substrate(21), an interlayer dielectric(23) is formed on the substrate(21). A contact hole is formed by etching the interlayer dielectric(23) to expose the junction region(22). A titanium and a titanium nitride films(24,25) are sequentially formed on the contact hole and the interlayer dielectric(23). Then, a tungsten spacer(26') is formed at both sidewalls of the contact hole. For removing the etching residues generated in the tungsten spacer(26') formation process, the resultant structure is cleaned by amine mixed solutions. For example the amine mixed solution is composed of hydroxyl amine(NH2-OH) of 10-20 %, H2O of 10-20 % and monetanol amine(NH2-CH2-CH2-OH) of 60-80 %.
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