METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A manufacturing method of semiconductor device is provided to prevent fluoro atoms within a tungsten silicide from being diffused into a gate insulating film to enhance the reliability of gate electrodes and gate insulating film. CONSTITUTION: A polysilicon film(3) having impurities doped is formed on a semiconductor substrate(1), and the resultant is baked to grow a natural oxide on a surface of the polysilicon film. An HMDS(hexamethyldisilazane: (CH3)3Si-NH-Si(CH3)3) is coated on the baked polysilicon film. An amorphous silicon film(4) is formed by using the bondage of the natural oxide and (CH3)3Si as a growth seed, wherein (CH3) is presented in the interface between the amorphous silicon film and polysilicon film. A tungsten silicide film(5) is formed on the amorphous silicon film(4), wherein the (CH3) prevents atoms within the tungsten silicide film(5) from being diffused.