METHOD FOR FORMING METAL LINE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A metal wire formation method is provided to improve a reliability of interconnections by preventing defects of the metal wire using an improved upper barrier layer. CONSTITUTION: A lower barrier layer(22) is formed on a semiconductor substrate(21). An aluminium film is then deposited on the lower barrier layer(22). An upper barrier layer(24) having the thickness of 600 Å more than is formed on the aluminium film. The resultant structure is then performed to UVAS(ultra vacuum ashing) treatment in order to stabilize the crystal structure of the upper barrier layer(24). Then, a metal wire(23a) is formed by selectively removing the upper barrier layer(24), the aluminium film and the lower barrier layer(22).