LATERAL HIGH-VOLTAGE SEMICONDUCTOR COMPONENT WITH REDUCED SPECIFIC CLOSING RESISTOR

摘要

The invention relates to a lateral high-voltage semiconductor component which is provided with p-conducting and n-conducting layers (13, 14) which extend in a lateral direction. The dose of said layers amounts to 2a x 10<12> charge carrier cm<-2>. Said layers can be provided with a lateral doping concentration profile (a = 0,5 ... 50). The topmost layer is provided with a dose of a x 10<12> charge carrier cm<-2> while the lowest layer has a dose of (a to 2a) x 10<12> charge carrier cm<-2>. Said semiconductor layers (13, 14) can be floating or can be linked with, e.g. a body source region (5, 4).