| 摘要 |
PURPOSE: A solid state image sensor and a method for manufacturing the same are provided to simplify a manufacturing process by forming length differences between poly gate electrodes. CONSTITUTION: A solid state image sensor and a method for manufacturing the same comprise the first conductive type semiconductor substrate(31), the second conductive type well region(33), a buried channel region(35), a gate insulating layer(39), and a plurality of poly gate region(37). The second conductive type well region(33) is formed on the semiconductor substrate(31). The buried channel region(35) is formed within the second conductive type well region(33). The gate insulating layer(39) is formed on the buried channel region(35). The plurality of poly gate electrode(37) is formed on the gate insulating layer(39) according to a constant distance.
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