| 摘要 |
Process of manufacturing a semiconductor device comprising a step of forming recessed zones in a semiconductor layer (2) of a first conductivity type, a step of oxidation for forming a gate oxide layer (26) at the sidewalls of the recessed zones, a step of forming a polysilicon gate electrode inside the recessed zones, a step of forming body regions (23) of a second conductivity type in the semiconductor layer (2) between the recessed zones, and a step of forming source regions (24) of the first conductivity type in the body regions (23). The step of forming recessed zones comprises a step of local oxidation (LOCOS) of the surface of the semiconductor layer (2) wherein the recessed zones will be formed, with an oxide growth at the semiconductor layer's cost (2) in order to obtain thick oxide regions (18) penetrating in the semiconductor layer (2), and a step of etching wherein the oxide of the thick oxide regions (18) is removed. <IMAGE> |
