发明名称 Semiconductor memory device having reversing logic means
摘要 A DRAM having open-bit-lines wherein noise to be impressed to word-lines can be restricted within a certain range. The DRAM includes a logic reversing circuit for reversing the logic levels of a portion of bits in a bit sequence to be stored, and a circuit for recording and detecting whether the logic levels of the portion of the bits is reversed for each stored bit sequences. Logic reversal takes place when one logic level predominates the bits of the bit sequence. Examples of the portion of bits in a bit sequence subject to logic level reversal would be the odd-numbered bits or even-numbered bits in a sequence.
申请公布号 US6075735(A) 申请公布日期 2000.06.13
申请号 US19980164368 申请日期 1998.10.01
申请人 NEC CORPORATION 发明人 SUGIBAYASHI, TADAHIKO
分类号 G11C11/409;G11C7/10;G11C11/4096;(IPC1-7):G11C7/02 主分类号 G11C11/409
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