| 发明名称 |
Method of forming a via with plasma treatment of SOG |
| 摘要 |
A method of forming a via is provided comprising a plasma treatment at the spin-on-glass layer after forming the unlanding via. The plasma comprises hydrogen and a second gas. The mist containing in the spin-on-glass layer is damaged and removed away.
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| 申请公布号 |
US6074941(A) |
申请公布日期 |
2000.06.13 |
| 申请号 |
US19980113471 |
申请日期 |
1998.07.10 |
| 申请人 |
UNITED SEMICONDUCTOR CORP. |
发明人 |
HSIEH, CHING-HSING;LU, WILLIAM;HSU, CHIH-CHING;KUO, YUNG-CHIEH |
| 分类号 |
H01L21/3105;H01L21/316;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/3105 |
| 代理机构 |
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