Self-aligned implant under transistor gate

摘要

The invention comprises a transistor having a self-aligned implant under the gate. The transistor comprises a drain region, a source region opposite the drain region, and a channel region in a semiconductor substrate extending between the source region and the drain region. A front gate is disposed outwardly from the first substrate layer and is separated from the channel region by a dielectric layer. The front gate comprises a first gate layer disposed outwardly from the dielectric layer and a second gate layer disposed outwardly from the first gate layer. A self-aligned implant region is disposed inwardly from the channel region and in approximate vertical alignment with the front gate.