发明名称 |
Method for epitaxial growth on a substrate |
摘要 |
The invention concerns a method for epitaxial growth of a material on a first solid material from a material melting on the material, characterized in that it comprises: a step of growth of the first material on the substrate, made of a second material; a step whereby crystalline tips of the first material are made to grow from the contact surface between the first material and the melting material; a step which consists in causing crystals to grow laterally from the crystalline tips in a plane parallel to that of the free surface of the melting material. |
申请公布号 |
AU1280600(A) |
申请公布日期 |
2000.06.13 |
申请号 |
AU20000012806 |
申请日期 |
1999.11.25 |
申请人 |
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS) |
发明人 |
ANDRE LEYCURAS |
分类号 |
C30B11/06;C23C16/46;C30B11/00;C30B11/12;C30B19/00;C30B25/10;C30B29/52;H01L21/208 |
主分类号 |
C30B11/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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